roithner lasertechnik roithner lasertechnik a-1040 vienna, schoenbrunner strasse 7, austria tel: +43 -1- 586 52 43-0 fax: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1020-500G technical data high power infrared laserdiode structure: ingaas quantum well lasing wavelength: 1020 nm typ., multimode max. optical power: 600 mw, 1 x 100 m2 aperture package: 9 mm pin connection: 1) laser diode cathode 2) laser diode anode and photodiode cathode 3) photodiode anode maximum ratings (tc=25c) characteristic symbol rating unit optical output power p o 600 mw ld reverse voltage v r(ld) 2 v pd reverse voltage v r(pd) 30 v operating temperature t c -40 .. +50 c storage temperature t stg -70 .. +85 c optical-electrical characteristics (tc = 25c) characteristic symbol test condition min typ max unit optical output power p o 500 mw threshold current i th 300 350 ma operation current i op p o = 500 mw 790 820 ma operation voltage u op p o = 500 mw 1.5 1.6 v lasing wavelength l p p o = 500 mw 990 1020 1040 nm spectral width fwhm d l p o = 500 mw 10 nm beam divergence q / / p o = 500 mw 7 10 13 beam divergence q ^ p o = 500 mw 15 30 35 differential efficiency dp o /di op p o = 500 mw 0.4 0.7 1.0 mw/ma monitor current i m p o = 500 mw 150 350 600 a note! laserdiode must be cooled! free datasheet http:///
free datasheet http:///
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